' j.e11eu ^.mi~(,onauctoi , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor 2SB925 description ? high collector current:: lc= -7a ? low collector saturation voltage : vce(sat)= -0.6v(max)@lc= -5a ? high speed switching applications ? designed for low voltage switching applications. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic icm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak total power dissipation @ tc=25-c junction temperature storage temperature range value -40 -20 -5 -7 -12 30 150 -55-150 unit v v v a a w 'c ?c - ?"-,. 2 ft '^ fih: 1 base ! 2 collector ' ; 3 knitter ' ' to-220c package 1 ? 1_ ?? b *? ^cn= cr ? h ' " ~~f j1 k f -h c i r pr" j dim a b c d f g h j k l q r s u v * mm min 15.50 9.90 4.20 0.70 3.40 4.98 2.68 0.44 13 00 1.10 2.70 2.30 1.29 6.45 8.66 max 15.90 10.20 4.50 0.90 3.70 5.18 2.90 0.80 13.40 1 45 2.90 2.70 1,35 6.65 8.86 r ? i rk n.i semi-conductois reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. i loweser. n.i semi-condiictors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conditciors enconriiges customers to verity that datasheets are current before placing orders. qualiry 5emi-conductors
silicon pnp power transistor 2SB925 electrical characteristics tc=25t; unless otherwise specified symbol v(br)ceo vce(sat) vee(sat) icbo iebo hpe-i hfe-2 cob fr parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain dc current gain collector output capacitance current-gain ? bandwidth product conditions lc=-10ma;lb=0 lc--5a; ib=-0.16a ic=-5a;ib=-0.16a vcb= -40v; ie= 0 veb= -5v; lc= 0 lc=-0.1a;vce=-2v lc= -2a; vce= -2v le=0;vcb=-10v;f= 1mhz lc=-0.5a;vce=-10v min -20 45 60 typ. 140 150 max -0.6 -1.5 -50 -50 260 unit v v v u a ma pf mhz hfe,2 classifications r 60-120 q 90-180 p 130-260
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